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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/4
HLB122I
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB122I is a medium power transistor designed for use in switching applications.
Features
* High breakdown voltage * Low collector saturation voltage * Fast switching speed
TO-251
Absolute Maximum Ratings (Ta=25C)
* Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 C Junction Temperature ................................................................................................................ +150 C * Maximum Power Dissipation Total Power Dissipation (Tc=25C)................................................................................................. 30 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage ................................................................................................. 600 V BVCEO Collector to Emitter Voltage .............................................................................................. 400 V BVEBO Emitter to Base Voltage ....................................................................................................... 6 V IC Collector Current (DC)............................................................................................................ 800 mA IC Collector Current (Pulse)...................................................................................................... 1600 mA IB Base Current (DC).................................................................................................................. 100 mA IB Base Current (Pulse) .............................................................................................................. 200 mA
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE1 *hFE2 tf Min. 600 400 6 10 10 Typ. Max. 10 10 10 400 800 1 40 0.6 Unit V V V uA uA uA mV mV V Test Conditions IC=100uA IC=10mA IE=10uA VCB=600V VCE=400V VEB=6V IC=100mA, IB=20mA IC=300mA, IB=60mA IC=100mA, IB=20mA VCE=10V, IC=0.1A VCE=10V, IC=0.5A VCC=100V, IC=0.3A, IB1=-IB2=0.06A
*Pulse Test: Pulse Width 380us, Duty Cycle2%
uS
Classification of hFE1
Rank Range
HLB122I
B1 10-17
B2 13-22
B3 18-27
B4 23-32
B5 28-37
B6 33-40
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100 10000
Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 2/4
Saturation Voltage & Collector Current
125 C
o
75 C
o
Saturation Voltage (mV)
1000 75 C 125 C
o o o
25 C
o
hFE
10
100
25 C
hFE @ VCE=10V
10 VCE(sat) @ IC=5IB
1 1 10 100 1000
1 1 10 100 1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000 VBE(sat) @ IC=5IB
ON Voltage & Collector Current
1000
75 C 1000 25 C
o
o
125 C
o
100 1 10 100 1000
ON Voltage-VBE(on) (mV)
Saturation Voltage (mV)
VBE(on) @ VCE=10V
100 1 10 100 1000
Collector Current-IC (mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100
Safe Operating Area
10000
Capacitance-Cob (pF)
Collector Current (mA)
1000
10
100
PT=1ms PT=100ms PT=1s
10
1 0.1 1 10 100
1 1 10 100 1000
Reverse-Biased Voltage (V)
Forward-Biased Voltage (V)
HLB122I
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 3/4
Switching Time & Collector Current
10 VCC=45V, IC=5IB1=-5IB2
Switching Time (us).. .
Tstg 1
Ton
Tf 0.1 100
1000
Collector Current (mA)
HLB122I
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-251 Dimension
Marking:
Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 4/4
A
B
C D
LB H 122I Date Code Control Code
F 3 I E K 2 1
G
Style: Pin 1.Base 2.Collector 3.Emitter
H
J
3-Lead TO-251 Plastic Package HSMC Package Code: I *: Typical
DIM A B C D E F
Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835
Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20
DIM G H I J K
Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165
Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50
Notes: 1.Dimension and tolerance based on our Spec. dated May. 24,1995.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB122I
HSMC Product Specification

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